Description of low temperature bandtail states in two-dimensional semiconductors using path integral approach

被引:3
|
作者
Pinsook, Udomsilp [1 ,2 ]
Thongnum, Anusit [2 ,3 ]
Sa-yakanit, Virulh [1 ]
机构
[1] Chulalongkorn Univ, Dept Phys, Fac Sci, Ctr Excellence Forum Theoret Sci, Bangkok 10330, Thailand
[2] Commiss Higher Educ, Thailand Ctr Excellence Phys, Bangkok 10400, Thailand
[3] Srinakharinwirot Univ, Dept Phys, Fac Sci, Bangkok 10110, Thailand
关键词
DENSITY-OF-STATES; HEAVILY-DOPED SEMICONDUCTORS; SLOW ELECTRONS; EFFECTIVE-MASS; POLAR CRYSTAL; GAS;
D O I
10.1063/1.4802721
中图分类号
O59 [应用物理学];
学科分类号
摘要
We used the solutions from the variational path integral to suggest a function form of the bandtail states of a two-dimensional system. The analytic solutions provide two regimes, i.e., the ground state (low temperature) and the semiclassical (high temperature) limits. We used the theoretical results to describe the results of the bandtail states in Si/SiO2 heterostructure reported recently (Jock et al., Appl. Phys. Lett. 100, 023503 (2012)). The low-temperature bandtail provided good agreement to the experimental results (sample B) with the parameters of Delta = 0.225 nm, L = 3.55 nm, and a = 5 nm. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802721]
引用
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页数:4
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