Charge filling induced quasi-two dimensional charge/spin density wave channel in a ballistic transport device

被引:0
作者
Saumya, Biswas [1 ,2 ]
机构
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA
基金
美国国家科学基金会;
关键词
charge density wave; spin density wave; ballistic transport; mean field theory; NEGATIVE-U; SINGULARITIES; MECHANISM; DYNAMICS;
D O I
10.1088/1361-648X/ac90a6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Charge filling controlled mean field metal-insulator phase transition is examined in the context of two dimensional Fermi surface nesting and van Hove singularity induced charge density wave (CDW), spin density wave (SDW) condensates. In the framework of a coherent ballistic transport model utilizing the Non-Equilibrium Green Function approach (NEGF), a three terminal device with metallic gate, source, drain and CDW/SDW channel is simulated and studied. Within the validity of mean field approximation, we exposit the commensurability and boundary effects. The efficacy of the Hubbard model for (quasi) two dimensional Charge and Spin Density Wave materials is discussed. A two orbital generalization of the effective Hamiltonian is proposed for transport calculations in rare earth Tellurides RTe (3).
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页数:10
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