High-Performance Surface Acoustic Wave Resonators in the 1 to 3 GHz Range Using a ScAlN/6H-SiC Structure

被引：121

作者：

Hashimoto, Ken-ya ^{[1
]}

Sato, Shuhei ^{[2
]}

Teshigahara, Akihiko ^{[3
]}

Nakamura, Takuya ^{[3
]}

Kano, Kazuhiko ^{[3
]}

机构：

[1] Chiba Univ, Grad Sch Engn, Chiba, Japan

[2] Chiba Univ, Fac Engn, Chiba, Japan

[3] DENSO Corp, Res Labs, Nisshin, Japan

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2013年 / 60卷 / 03期

基金：

日本学术振兴会;

关键词：

Couplings - III-V semiconductors - Acoustic surface wave devices - Aluminum nitride - Acoustic resonators - Wide band gap semiconductors - Acoustic waves - Electromechanical coupling;

D O I：

10.1109/TUFFC.2013.2606

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure.

引用

页码：637 / 642

页数：6

共 18 条

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