A chelating resin containing S, N and O atoms: Synthesis and adsorption properties for Hg(II)

被引:54
作者
Sun, CM
Qu, RJ [1 ]
Ji, CN
Wang, Q
Wang, CH
Sun, YZ
Cheng, GX
机构
[1] Yantai Normal Univ, Sch Chem & Mat Sci, Shandong 264025, Peoples R China
[2] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
基金
中国博士后科学基金;
关键词
chelating resin containing S; N; O atoms; synthesis; adsorption; Hg(II);
D O I
10.1016/j.eurpolymj.2005.06.024
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A novel chelating resin containing S, N and O atoms (PSME-EDA) was synthesized by using poly(2-hydroxyethylmercaptomethylstyrene) (PSME) and diethanolamine (EDA) as materials. Its structure was characterized by elemental analysis, Fourier transform-infrared spectra (FTIR), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The adsorption of the resin for Hg2+ was investigated. The saturated adsorption capacity of PSME-EDA for Hg2+ could reach to about 1.1 mmol/g at 25 degrees C when the initial Hg2+ concentration was 0.02 mol/l. Some factors affecting the adsorption such as temperature, reaction time and ion concentration were also studied. The results showed that adsorption was controlled by liquid film diffusion. The increasing of temperature was beneficial to adsorption. The Langmuir model was better than the Freundlich model to describe the isothermal process. The values of Delta G, Delta H, and Delta S calculated at 25 degrees C were -7.99 kJ mol(-1), 22.5 kJ mol(-1) and 34.4 J mol(-1) K-1, respectively. The adsorption mechanism of PSME-EDA resin for Hg(II) was confirmed by X-ray photoelectron spectroscopy (XPS). (c) 2005 Elsevier Ltd. All rights reserved.
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页码:188 / 194
页数:7
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