Copper oxide nanowires: a review of growth

被引:201
作者
Filipic, G. [1 ]
Cvelbar, U.
机构
[1] Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia
关键词
CUO NANOWIRES; THERMAL-OXIDATION; CU2O NANOWIRES; POTENTIOSTATIC DEPOSITION; SENSING PROPERTIES; FIELD-EMISSION; SURFACE; PLASMA; ARRAYS; NANOSTRUCTURES;
D O I
10.1088/0957-4484/23/19/194001
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cuprous oxide (Cu2O) and cupric oxide (CuO) nanowires have started playing important roles in energy conversion devices and optoelectronic devices. Although the desired advanced properties have been demonstrated, these materials cannot yet be produced in large-bulk quantities in order to bridge the technological transfer gap for wider use. In this respect, the quest for the most efficient synthesis process which yields not only large quantities but also high quality and advanced material properties continues. This paper gives an extensive review of copper oxide nanowire (NW) synthesis by all methods and routes by which various researchers have obtained their nanomaterial. These methods are critically overviewed, evaluated and compared. Methods of copper oxide NW growth include wet-chemical methods based on pure solution growth, electrochemical and hydrothermal routes as well as thermal and plasma oxidation methods. In terms of advanced nanowire synthesis, the fast thermal method or direct plasma oxidation as well as the combined hybrid wet-chemical method in which copper hydroxide NWs are produced and sequentially transformed by plasma oxidation which produces Cu2O NWs are seen as the most promising methods to explore in the near future. These methods not only yield large quantities of NWs, but produce high quality material with advanced properties.
引用
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页数:16
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