Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy

被引：14

作者：

Liu, Chi-Chun ^{[1
]}

Pitera, Jed ^{[1
]}

Lafferty, Neal ^{[2
]}

Lai, Kafai ^{[2
]}

Rettner, Charles ^{[1
]}

Tjio, Melia ^{[1
]}

Arellano, Noel ^{[1
]}

Cheng, Joy ^{[1
]}

机构：

[1] IBM Almaden Res Ctr, 650 Harry Rd, San Jose, CA 95120 USA

[2] IBM Microelect, Hopewell Jct, NY 12533 USA

来源：

ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES IV | 2012年 / 8323卷

关键词：

Directed self-assembly; DSA; block copolymer; BCP; OPC; fast model; LITHOGRAPHY;

D O I：

10.1117/12.916525

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A photomask design flow for generating guiding patterns used in graphoepitaxial DSA processes is proposed and tested. In this flow, a new fast DSA model is employed for DSA structure verification. The execution speed and accuracy of the fast model were benchmarked with our previously reported Monte Carlo method. We demonstrated the process window verification using the OPC/DSA flow with the fast DSA model and compared this with experimental results in the guiding patterns simulated by e-beam lithography.

引用

页数：7

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