Co and Al co-doping for ferromagnetism in ZnO:Co diluted magnetic semiconductors

被引：54
|
作者：
Chang, G. S. [1 ]
Kurmaev, E. Z. [2 ]
Boukhvalov, D. W. [2 ,3 ]
Finkelstein, L. D. [2 ]
Moewes, A. [1 ]
Bieber, H. [4 ]
Colis, S. [4 ]
Dinia, A. [4 ]
机构：
[1] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
[2] Russian Acad Sci, Ural Div, Inst Met Phys, Ekaterinburg 620041, Russia
[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands
[4] IPCMS, CNRS, UMR 7504, ULP ECPM, F-67034 Strasbourg, France
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 05期
基金：
加拿大自然科学与工程研究理事会; 俄罗斯科学基金会;
关键词：
THIN-FILMS; TEMPERATURE; OXIDE; BULK;
D O I：
10.1088/0953-8984/21/5/056002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Co and Al co-doped ZnO diluted magnetic semiconductors are fabricated by a pulsed laser deposition and their electronic structure is investigated using x-ray absorption and emission spectroscopy. The Zn0.895Co0.100Al0.005O thin films grown under oxygen-rich conditions exhibit ferromagnetic behavior without any indication of Co clustering. The Co L-edge and O K-edge x-ray absorption and emission spectra suggest that most of the Co dopants occupy the substitutional sites and the oxygen vacancies are not responsible for free charge carriers. The spectroscopic results and first principles calculations reveal that the ferromagnetism in Co and Al co-doped ZnO semiconductors mainly arises from Al interstitial defects and their hybridization with Co substitutional dopants.
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页数：5
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