Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p-i-n solar cells

被引：12

作者：

Bae, Si-Young ^{[1
]}

Song, Young-Ho ^{[2
]}

Jeon, Seong-Ran ^{[2
]}

Kim, Dong-Min ^{[1
]}

Jho, Young-Dahl ^{[1
]}

Lee, Dong-Seon ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

[2] Korea Photon Technol Inst, Kwangju 500779, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 387卷

基金：

新加坡国家研究基金会;

关键词：

Crystal morphology; Metalorganic chemical vapor deposition; Nitrides; Solar cells; GAN; STRAIN; RELAXATION;

D O I：

10.1016/j.jcrysgro.2013.10.031

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thick InGaN alloys with high In content are essential for emerging InGaN photovoltaic applications. By applying a compositionally graded structure, various thicknesses of InGaN layers were grown using metal organic chemical vapor deposition. We could obtain pseudomorphic and highly strained layer even upto 100 nm of InGaN film as confirmed by X-ray reciprocal space mapping and Raman spectra. To probe the validity of those InGaN layers for solar cell applications, optical transmittance measurements were carried out and absorption properties were compared. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：23 / 28

页数：6

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