Influences of Electrode Materials on the Resistive Memory Switching Properties of ZnOxS1-x:Mn Thin Films

被引：4

作者：

Han, Yong ^{[1
,3
]}

Chung, Isaac ^{[1
]}

Park, Sukhyung ^{[2
]}

Cho, Kyoungah ^{[2
]}

Kim, Sangsig ^{[1
,2
]}

机构：

[1] Korea Univ, Dept Nano Semicond Engn, Seoul 137701, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 137701, South Korea

[3] SK Hynix Semicond Inc, Ichon Si 467701, Kyoungki Do, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Resistive Switching; Top Electrode; ZnOxS1-x:Mn; Unipolar Switching; Bipolar Switching; BEHAVIOR;

D O I：

10.1166/jnn.2013.7686

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, we investigate the effect of top electrode (TE) materials on the resistive switching characteristics of TE/ZnOxS1-x:Mn/Al devices. Al, Cu, Au, Ni, and ITO are used as the TE materials of our devices. Except for the ITO TE devices, all the devices show unipolar resistive switching and maintain memory characteristics even after 10(4) s. The ratios of high resistance state (HRS) and low resistance state (LRS) for the Al, Cu, Au, and Ni TE devices are 10(5), 10(5), 10(4), and 10(2), respectively. The low ratio of HRS and LRS of the Ni TE device is attributed to a high magnitude of current at HRS. The Cu/ZnOxS1-x:Mn/Al device shows the smallest distribution of set voltages. The ITO TE device exhibits bipolar resistive switching and suffers change in the resistance at HRS after 10(3) s. Considering the distribution of set voltages and the ratio of HRS and LRS, Cu is the most suitable TE material for the TE/ZnOxS1-x:Mn/Al devices.

引用

页码：6208 / 6211

页数：4

共 19 条

[1] Study on the resistive switching time of TiO2 thin films
Choi, Byung Joon
Choi, Seol
Kim, Kyung Min
Shin, Yong Cheol
Hwang, Cheol Seong
Hwang, Sung-Yeon
Cho, Sung-sil
Park, Sanghyun
Hong, Suk-Kyoung
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (01)
[2] Resistivity and resistive switching properties of Pr0.7Ca0.3MnO3 thin films
Fujimoto, Masayuki
Koyama, Hiroshi
Kobayashi, Shinji
Tamai, Yukio
Awaya, Nobuyoshi
Nishi, Yuji
Suzuki, Toshimasa
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (24)
[3] Resistive Switching Characteristics of Cu/ZnO0.4S0.6/Al Devices Constructed on Plastic Substrates
Han, Yong
Cho, Kyoungah
Kim, Sangsig
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5732 - 5734
[4] Effect of electrode and interface oxide on the property of ReRAM composed of Pr0.7Ca0.3MnO3
Kaji, H.
Kondo, H.
Fujii, T.
Arita, M.
Takahashi, Y.
[J]. FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING), 2010, 8
[5] Highly durable and flexible memory based on resistance switching
Kim, Sungho
Yarimaga, Oktay
Choi, Sung-Jin
Choi, Yang-Kyu
[J]. SOLID-STATE ELECTRONICS, 2010, 54 (04) : 392 - 396
[6] A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
Kozicki, Michael N.
Gopalan, Chakravarthy
Balakrishnan, Muralikrishnan
Mitkova, Maria
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) : 535 - 544
[7] Aluminum Oxide Formation at Al/La1-xSrxMnO3 Interface: A Computational Study for Resistance Random Access Memory Applications
Lee, Nodo
Lansac, Yves
Jang, Yun Hee
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (01) : 339 - 343
[8] Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction
Li, Song-Lin
Gang, Jian-Lei
Li, Jie
Chu, Hai-Feng
Zheng, Dong-Ning
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (18)
[9] Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
Lin, Chun-Chieh
Lin, Chih-Yang
Lin, Meng-Han
Lin, Chen-Hsi
Tseng, Tseung-Yuen
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3146 - 3151
[10] Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films
Lin, Chun-Chieh
Chang, Yi-Peng
Ho, Chia-Cheng
Shen, Yu-Shu
Chiou, Bi-Shiou
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (03) : 633 - 636

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