A novel sensing scheme for high-speed & high-density ferroelectric RAM

被引：0

作者：

Choi, MK ^{[1
]}

Jeon, BG ^{[1
]}

Song, YJ ^{[1
]}

Kim, K ^{[1
]}

机构：

[1] Samsung Elect Co, Technol Dev, Semicond R&D Ctr, Yongin 449711, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2002年 / 40卷 / 04期

关键词：

FRAM;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The plate pulse-up sensing scheme is compared with the plate-pulse down sensing scheme for FRAM applications. It was observed that the plate pulse up sensing scheme was superior to the down sensing scheme with respect to speed and sensing margin. The plate pulse-up sensing scheme showed a very fast access time of 80 ns and a wide sensing margin of 320 fC/Cell at 3.3 V at an operating temperature of 85 degreesC. The function of the FRAM device was greatly enhanced by using the plate pulse-up sensing scheme.

引用

页码：697 / 700

页数：4

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