Raman scattering and photoluminescence analysis of B-doped CdS thin films

被引：93

作者：

Lee, J ^{[1
]}

机构：

[1] Kunsan Natl Univ, Sch Elect & Informat Engn, Kunsan, Chonbuk, South Korea

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

cadmium sulfide; boron; Raman scattering; solar cells;

D O I：

10.1016/j.tsf.2003.10.103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron-doped US thin films were chemically deposited onto glass substrates. X-Ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped US films. XRD results have confirmed that B-doped US films have a hexagonal structure with a preferential orientation of the (002) plane. The grain size of B-doped US films slightly decreases, but no change of the microstructure was observed. The PL spectra for all samples consist of two prominent broad bands approximately 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped US films. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：170 / 174

页数：5

共 21 条

[1] PHOTOLUMINESCENCE SPECTRA OF GAS-EVAPORATED CDS MICROCRYSTALS [J].