GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application

被引：38

作者：

Das, Atanu ^{[1
]}

Das, Anirban ^{[1
]}

Chang, Liann Be ^{[1
,2
]}

Lai, Chao Sung ^{[1
,3
,4
]}

Lin, Ray Ming ^{[1
,2
]}

Chu, Fu Chuan ^{[1
]}

Lin, Yen Heng ^{[1
,3
,4
]}

Chow, Lee ^{[1
,2
,5
]}

Jeng, Ming Jer ^{[1
,2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

[2] Chang Gung Univ, Green Technol Res Ctr, Tao Yuan 333, Taiwan

[3] Chang Gung Univ, Biomed Engn Res Ctr, Tao Yuan 333, Taiwan

[4] Chang Gung Univ, Mol Med Res Ctr, Tao Yuan 333, Taiwan

[5] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 03期

关键词：

CARRIER DIFFUSION LENGTH; SPATIAL-RESOLUTION; PULSE TECHNIQUE; LAPS; CAPACITORS; PENICILLIN; NITRIDE; DEVICES; SILICON;

D O I：

10.7567/APEX.6.036601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si3N4 similar to 50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365 nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaN-based LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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