Higher than 90% internal quantum efficiency of photoluminescence in GaN:Si,Zn

被引：2

作者：

Reshchikov, M. A. ^{[1
]}

McNamara, J. D. ^{[1
]}

Behrends, A. ^{[2
]}

Mohajerani, M. S. ^{[2
]}

Bakin, A. ^{[2
]}

Waag, A. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Phys, 701 W Grace St, Richmond, VA 23284 USA

[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期

关键词：

photoluminescence; GaN; quantum efficiency; LIGHT-EMITTING-DIODES; GAN; GROWTH;

D O I：

10.1002/pssc.201200664

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) from high-quality GaN co-doped with silicon and zinc was investigated in detail. The internal quantum efficiency (IQE) of PL was determined from the analysis of the dependencies of the PL intensity on the excitation intensity and temperature, and the simulation of these dependencies with a phenomenological model based on rate equations. The model reproduces an important phenomenon: the quenching of a recombination channel with a high IQE causes a rise in efficiency of all the other PL bands. Quantitative analysis of this phenomenon allows one to determine reliably the absolute IQE of PL. The absolute IQE of the PL in GaN co-doped with Si and Zn exceeds 90%, with the largest contribution coming from the blue luminescence band associated with the Zn-Ga acceptor. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：507 / 510

页数：4

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