Changes in the composition of the surface layer of silicon under sputtering by oxygen and cesium ion beams

被引：0
作者：
Pustovit, A. N. [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION | 2013年 / 7卷 / 01期
关键词：
Cesium; -; Ions; Silicon; Oxygen;
D O I：
10.1134/S1027451013010175
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The distribution profiles of primary ion beams of electroactive atoms (cesium and oxygen) in silicon samples have been investigated experimentally. It is demonstrated that the initial chemical composition of a sample is modified due to the implantation of primary ions at depths of up to 5 nm from its surface. A mechanism responsible for the enhancement of the secondary-ion yield during target sputtering by the chemically active elements has been proposed. DOI: 10.1134/S1027451013010175
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收藏
页码：168 / 171
页数：4
相关论文
共 13 条
  • [1] Andersen H., 1981, SPUTTERING PARTICLE, VI, P194
  • [2] Behrisch R., 1991, SPUTTERING PARTICLE, VIII, P7
  • [3] Cherepin V.T., 1981, Ion probe
  • [4] FIRSOV OB, 1959, SOV PHYS JETP-USSR, V9, P1076
  • [5] Kovarskii A. P., 2003, P 16 INT C INT IONS, V1, P347
  • [6] Mashkova E. S., 1989, FUNDAMENTAL APPL ASP, P5
  • [7] [Пустовит A.Н. Pustovit A.N.], 2006, [Поверхность. Рентгеновские, синхротронные и нейтронные исследования, JOURNAL OF SURFACE INVESTIGATION. X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUESJournal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques is published 6 issues per year by Pleiades Publishing, LTD.in 2007.( is available ONLINE by subscrition from www.springerlink.com. ISSN: 1819-7094 - electronic version
  • [8] ISSN: 1027-4510 - print version), http://www.springerlink.com., Poverkhnost'. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya], P65
  • [9] SIMS Diagnostics of the Structure of Nanometer-Sized Semiconducting Layers Doped with Impurities
    Pustovit, A. N.
    [J]. JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2010, 4 (05) : 784 - 787
  • [10] Roth I., 1983, SPUTTERING PARTICLE, VII, P134
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