Silicon Heterojunction Solar Cell with a p-type Amorphous Silicon Emitter Formed by Catalytic Impurity Doping

被引：0

作者：

Akiyama, Katsuya ^{[1
]}

Ohdaira, Keisuke ^{[1
]}

机构：

[1] JAIST, Nomi, Ishikawa 9231292, Japan

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

semiconductor device doping; photovoltaic cells; amorphous materials; silicon;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

We apply a novel doping method, catalytic impurity doping (Cat-doping), to the fabrication of silicon beterojunction (SHJ) solar cells. Tunneling conduction through an indium tin oxide (ITO)/amorphous Si (a-Si) interface can be drastically improved by applying B Cat-doping onto a-Si prior to ITO deposition. We demonstrate the operation of an SHJ solar cell with an emitter layer formed by B Cat-doping. The SHJ cell shows an open-circuit voltage (V-oc) of >0.6 V, suggesting the applicability of B Cat-doping to the fabrication of SHJ solar cells.

引用

页码：2097 / 2099

页数：3

共 7 条

[1] Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C [J].