High-k polymeric gate insulators for organic field-effect transistors

被引:23
|
作者
Yu, Haiyang [1 ,2 ]
Chen, Yihang [1 ,2 ]
Wei, Huanhuan [1 ,2 ]
Gong, Jiangdong [1 ,2 ]
Xu, Wentao [1 ,2 ]
机构
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, 38 Tongyan Rd,Haihe Educ Pk, Tianjin 300350, Peoples R China
[2] Tianjin Key Lab Photoelect Thin Film Devices & Te, 38 Tongyan Rd,Haihe Educ Pk, Tianjin 300350, Peoples R China
关键词
organic field-effect transistors (OFETs); high dielectric constant (high-k); gate insulators; polymer dielectrics; thin film transistors; THIN-FILM TRANSISTORS; LOW-VOLTAGE; DIELECTRICS; PERFORMANCE; SEMICONDUCTORS; MOBILITY; HYSTERESIS; DEVICE; NANOPARTICLE; STABILITY;
D O I
10.1088/1361-6528/ab00a4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented.
引用
收藏
页数:15
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