Microstructures and Photoluminescence of a-Si:H/a-SiNx Multilayers Annealed at Different Temperature

被引：0
|
作者：
Song, Chao [1 ]
Guo, Yan Qing [1 ]
Wang, Xiang [1 ]
Song, Jie [1 ]
Huang, Rui [1 ]
机构：
[1] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China
来源：
MATERIALS SCIENCE AND NANOTECHNOLOGY I | 2013年 / 531-532卷
关键词：
A-Si:/a-SiNx Multilayers; Thermal Annealing; Photoluminescence;
D O I：
10.4028/www.scientific.net/KEM.531-532.465
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Series of a-Si:H/a-SiNx multilayers were prepared by very high frequency plasma enhanced chemical vapor deposition system. As-deposited samples were thermally annealed at the various temperatures. The effects of thermal annealing on the properties of luminescence were investigated. The photoluminescence intensity of the film annealed at 600 degrees C is found to be higher than that of the film without annealing. However, with further increasing the annealing temperature from 600 degrees C to 800 degrees C, the photoluminescence intensity of the film rapidly decreases. Fourier transform infrared spectroscopy and Raman-scattering spectroscopy were used to study the changes of the microstructures and bonding configurations. Based on the measurements of structural and bonding configurations, the improved photoluminescence intensity is attributed to the forming of radiative defect states caused by the effusion of hydrogen in the films
引用
收藏
页码：465 / 468
页数：4
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