Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory

被引：8

作者：

Kim, Dae Hwan ^{[1
]}

Park, Sungwook ^{[1
]}

Seo, Yujeong ^{[2
]}

Kim, Tae Geun ^{[2
]}

Kim, Dong Myong ^{[1
]}

Cho, Il Hwan ^{[3
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[3] Myongji Univ, Dept Elect Engn, Yongin 449728, Gyeonggi, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2012年 / 12卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

MANOS memory; SONOS memory; bias temperature instability; interface trap; DEVICE DEGRADATION; GENERATION; GATE;

D O I：

10.5573/JSTS.2012.12.4.449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-Al2O3-Nitride-Oxide-Semicon-ductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is similar to 0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36 similar to 0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated h* diffusion-induced Si/SiO2 interface trap (N-IT) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide (N-OT). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4 similar to 0.9 in the programmed cell and n=0.65 similar to 1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled h* diffusion followed by N-IT passivation.

引用

页码：449 / 457

页数：9

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