Progress in the low temperature oxidation of MOSi2

被引：0

作者：

Wang, G ^{[1
]}

Zhao, SK ^{[1
]}

Jiang, W ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2001年 / 16卷 / 06期

关键词：

molybdenum disilicide; low temperature oxidation; Pesting;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The low temperature oxidation of MoSi2 was reviewed. The simultaneous oxidation of Mo and Si occurs at low temperature (<1000 degrees C) with the formation of MoO3 and SiO2, and this nonselective oxidation often leads to structural disintegration of MoSi2 (Pesting). Several models of the pesting reaction were summarized as follows:(1) Grain boundary hardening mechanism; (2) Pore-and-crack oxidation mechanism; (3) Grain boundary diffusion and oxidation mechanism. On these bases, some methods that prevent the occurrence of Pesting were proposed and elucidated, and some proposals for the low temperature oxidation research of MoSi2 were suggested.

引用

页码：1041 / 1048

页数：8