Modeling of High-Current Damage in SiGe HBTs Under Pulsed Stress

被引：0

作者：

Raghunathan, Uppili S. ^{[1
]}

Wier, Brian ^{[1
]}

Martinez, Rafael Perez ^{[1
]}

Fleetwood, Zachary E. ^{[1
]}

Omprakash, Anup ^{[1
]}

Ying, Hanbin ^{[1
]}

Zeinolabedinzadeh, Saeed ^{[1
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Tech, Sch ECE, 777 Atlantic Dr,NW, Atlanta, GA 30332 USA

来源：

2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2016年

关键词：

Annealing; mixed-mode stress; reverse EB stress; SiGe HBT; reliability; degradation; bipolar transistor; impact-ionization; hot-carrier damage; avalanche generation; Auger recombination; high-current damage; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage model for Auger-induced hot-carrier damage. The Auger hot-carrier generation is decoupled from classical mixed-mode damage and annealing on the output plane by using pulsed stress conditions to modulate the self-heating within the device under stress. The physics of high-current degradation is analyzed, and a temperature dependent degradation model is presented. This model is the first of its kind in both the CMOS and bipolar communities and solves a significant portion of the puzzle for predictive modeling of SiGe HBT safe-operating- area (SOA) and reliability.

引用

页码：17 / 20

页数：4

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