Piezoelectric force microscopy of crystalline oxide-semiconductor heterostructures

被引：1

作者：

Marshall, M. S. J. ^{[1
]}

Kumah, D. P. ^{[1
]}

Reiner, J. W. ^{[1
]}

Baddorf, A. P. ^{[2
]}

Ahn, C. H. ^{[1
]}

Walker, F. J. ^{[1
]}

机构：

[1] Yale Univ, Dept Appl Phys, CRISP, New Haven, CT 06520 USA

[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

基金：

美国国家科学基金会;

关键词：

SILICON; FERROELECTRICITY; SRTIO3;

D O I：

10.1063/1.4750243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of epitaxial SrTiO3 grown on silicon exhibit compressive in-plane strain that may stabilize ferroelectricity in this normally non-ferroelectric material. We investigate this possibility by using an ultra-high vacuum atomic force microscope to measure the local force response of coherently strained SrTiO3 films on silicon to an applied ac electric field. The observed cantilever response is different in regions that were previously written with positive and negative voltages, but the frequency dependence of this response indicates that the dominant forces are related to electrostatic charging rather than ferroelectricity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750243]

引用

页数：4

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