GaInAs/GaAs quantum-well growth assisted by Sb surfactant:: Toward 1.3 μm emission

被引：77
作者：
Harmand, JC [1 ]
Li, LH [1 ]
Patriarche, G [1 ]
Travers, L [1 ]
机构：
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期
关键词：
D O I：
10.1063/1.1751221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of highly strained GaInAs quantum wells on GaAs is investigated in the presence of Sb. Sb appears as an adequate isoelectronic surfactant: the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-free growth. This effect is used to extend the emission wavelength of GaInAs quantum wells. We obtained a 9-nm-thick Ga0.59In0.41As0.986Sb0.008 quantum wells with smooth interfaces, emitting at 1.27 mum at room temperature. (C) 2004 American Institute of Physics.
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页码：3981 / 3983
页数：3
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