Transport properties in microcrystalline silicon solar cells under AM1.5 illumination analysed by two-dimensional numerical simulation

被引：4

作者：

Fantoni, A

Vieira, M

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Uninova, P-2825 Monte De Caparica, Portugal

[2] ISEL, P-1900 Lisbon, Portugal

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(99)00139-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microcrystalline silicon is a two-phase material. Its composition can be interpreted as a series of grains of crystalline silicon imbedded in an amorphous silicon tissue, with a high concentration of dangling bonds in the transition regions. In this paper, results for the transport properties of a mu c-Si:H p-i-n junction obtained by means of two-dimensional numerical simulation are reported. The role played by the boundary regions between the crystalline grains and the amorphous matrix is taken into account and these regions are treated similar to a heterojunction interface. The device is analysed under AM1.5 illumination and the paper outlines the influence of the local electric field at the grain boundary transition regions on the internal electric configuration of the device and on the transport mechanism within the mu c-Si:H intrinsic layer. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1709 / 1714

页数：6

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