The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes

被引：0
作者：
Zubert, M. [1 ]
Starzak, L. [1 ]
Jablonski, G. [1 ]
Napieralska, M. [1 ]
Janicki, M. [1 ]
Napieralski, A. [1 ]
机构：
[1] Tech Univ Lodz, Dept Microelect & Comp Sci, Ul Wolczanska 221-223, PL-90924 Lodz, Poland
来源：
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年
关键词：
SiC; PiN; MPS diode; Schottky Diodes; Static Electro-Thermal Model; SPICE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic as well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behavior typical for bipolar and unipolar devices. The presented dynamic simulations of the diode switching process demonstrate that the proposed model produces accurate simulations results, consistent with the measurements. On the contrary, the model provided by the manufacturer fails to predict properly the device behavior.
引用
收藏
页码：796 / 799
页数：4
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