The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes

被引：0
作者：
Zubert, M. [1 ]
Starzak, L. [1 ]
Jablonski, G. [1 ]
Napieralska, M. [1 ]
Janicki, M. [1 ]
Napieralski, A. [1 ]
机构：
[1] Tech Univ Lodz, Dept Microelect & Comp Sci, Ul Wolczanska 221-223, PL-90924 Lodz, Poland
来源：
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年
关键词：
SiC; PiN; MPS diode; Schottky Diodes; Static Electro-Thermal Model; SPICE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic as well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behavior typical for bipolar and unipolar devices. The presented dynamic simulations of the diode switching process demonstrate that the proposed model produces accurate simulations results, consistent with the measurements. On the contrary, the model provided by the manufacturer fails to predict properly the device behavior.
引用
收藏
页码：796 / 799
页数：4
相关论文
共 36 条
  • [21] Field management in NiOx/β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation
    Vasquez, Jose Manuel Taboada
    Mukherjee, Ankita
    Singh, Smriti
    Khandelwal, Vishal
    Yuvaraja, Saravanan
    Maciel Garcia, Glen Isaac
    Rajbhar, Manoj
    Li, Xiaohang
    Sarkar, Biplab
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (44)
  • [22] An ON-Resistance Model for Silicon Carbide Merged p-i-n Schottky (MPS) Diodes
    Du, Qiwen
    Tao, Xuehui
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4033 - 4039
  • [23] A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms
    Nicholls, Jordan R.
    Dimitrijev, Sima
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 (01) : 545 - 553
  • [24] 1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
    Liu, Li
    Wu, Jiupeng
    Ren, Na
    Guo, Qing
    Sheng, Kuang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3679 - 3684
  • [25] Comparison of Hot Spot Temperature between Si and SiC Power MOSFET Using Electro-Thermal Analysis
    Kibushi, Risako
    Hatakeyama, Tomoyuki
    Yuki, Kazuhisa
    Unno, Noriyuki
    Ishizuka, Masaru
    PROCEEDINGS OF THE 2017 SIXTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017, 2017, : 921 - 925
  • [26] A 220 GHz subharmonic mixer based on schottky diodes with an accurate terahertz diode model
    Zhang, Yong
    Zhao, Wei
    Wang, Yunfei
    Ren, Tianhao
    Chen, Yapei
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2016, 58 (10) : 2311 - 2316
  • [27] Electro-Thermal Optimization of Common-Mode Screen for Organic Substrate-Based SiC Power Module
    Rajagopal, Narayanan
    Gurpinar, Emre
    Ozpineci, Burak
    DiMarino, Christina
    2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
  • [28] Optimization of the electrical properties of Al/a-SiC:H Schottky diodes by means of thermal annealing of a-SiC:H thin films
    Magafas, L.
    Kalomiros, J.
    Bandekas, D.
    Tsirigotis, G.
    MICROELECTRONICS JOURNAL, 2006, 37 (11) : 1352 - 1357
  • [29] Effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC Schottky barrier diodes
    Alok, D
    Egloff, R
    Arnold, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 929 - 932
  • [30] Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage
    Brezeanu, G
    Badila, M
    Tudor, B
    Millan, J
    Godignon, P
    Udrea, F
    Amaratunga, GAJ
    Mihaila, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) : 2148 - 2153
1234