The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes

被引：0
作者：
Zubert, M. [1 ]
Starzak, L. [1 ]
Jablonski, G. [1 ]
Napieralska, M. [1 ]
Janicki, M. [1 ]
Napieralski, A. [1 ]
机构：
[1] Tech Univ Lodz, Dept Microelect & Comp Sci, Ul Wolczanska 221-223, PL-90924 Lodz, Poland
来源：
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年
关键词：
SiC; PiN; MPS diode; Schottky Diodes; Static Electro-Thermal Model; SPICE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic as well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behavior typical for bipolar and unipolar devices. The presented dynamic simulations of the diode switching process demonstrate that the proposed model produces accurate simulations results, consistent with the measurements. On the contrary, the model provided by the manufacturer fails to predict properly the device behavior.
引用
收藏
页码：796 / 799
页数：4
相关论文
共 36 条
  • [1] An accurate electro-thermal model for merged SiC PiN Schottky diodes
    Zubert, M.
    Starzak, L.
    Jablonski, G.
    Napieralska, M.
    Janicki, M.
    Pozniak, T.
    Napieralski, A.
    MICROELECTRONICS JOURNAL, 2012, 43 (05) : 312 - 320
  • [2] Numerical analysis of SiC merged PiN Schottky diodes
    Ayalew, T
    Kim, SC
    Grasser, T
    Selberherr, S
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 949 - 952
  • [3] Improvement of an electro-thermal model of SiC MPS diodes
    Starzak, Lukasz
    Stefanskyi, Andrii
    Zubert, Mariusz
    Napieralski, Andrzej
    IET POWER ELECTRONICS, 2018, 11 (04) : 660 - 667
  • [4] SiC power Schottky and PiN diodes
    Singh, R
    Cooper, JA
    Melloch, MR
    Chow, TP
    Palmour, JW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 665 - 672
  • [5] Investigations of SiC merged pin Schottky diodes under isothermal and non-isothermal conditions
    Zarebski, J.
    Dabrowski, J.
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2011, 24 (03) : 207 - 217
  • [6] A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations
    Wu, Jiupeng
    Ren, Na
    Guo, Qing
    Sheng, Kuang
    MATERIALS, 2020, 13 (11)
  • [7] Analytical Electro-Thermal Model for Multianode Schottky Diodes With Improved Temperature-Dependent Parameters Extraction Method
    Tian, Yaoling
    He, Yue
    Huang, Kun
    Lin, Changxing
    Jiang, Jun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (02) : 418 - 423
  • [8] A geometry-scalable electrothermal compact circuit model of SiC merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events☆
    Borghese, A.
    Terracciano, V.
    Boccarossa, M.
    Irace, A.
    d'Alessandro, V.
    MICROELECTRONICS RELIABILITY, 2025, 168
  • [9] Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers
    Tang, Aik Yean
    Schlecht, Erich
    Lin, Robert
    Chattopadhyay, Goutam
    Lee, Choonsup
    Gill, John
    Mehdi, Imran
    Stake, Jan
    IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2012, 2 (03) : 290 - 298
  • [10] Electro-thermal SPICE Model for High-voltage SiC VJFETs
    Elpelt, R.
    Friedrichs, P.
    Hippeli, J.
    Schoerner, R.
    Treu, M.
    Tuerkes, P.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 731 - 734
1234