Stability and electronic structure of InN nanotubes from first-principles study

被引:0
作者
Chen, LJ [1 ]
机构
[1] S China Univ Technol, Applicat Phys Dept, Guangzhou 510640, Peoples R China
来源
CHINESE PHYSICS | 2006年 / 15卷 / 04期
关键词
InN; strain energies; band gap; first-principles calculation;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The stability and electronic structure of hypothetical InN nanotubes were studied by first-principles density functional theory. It was found that the strain energies of InN nanotubes are smaller than those of carbon nanotubes of the same radius. Single-wall zigzag InN nanotubes were found to be semiconductors with a direct band gap while the armchair Counterparts have an indirect band gap. The band gaps of nanotubes decrease with increasing diameter, similar to the case of carbon nanotubes.
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页码:798 / 801
页数:4
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