Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells

被引：2
|
作者：
Arapov, Yu. G. [1 ]
Gudina, S. V. [1 ]
Klepikova, A. S. [1 ]
Neverov, V. N. [1 ]
Podgornykh, S. M. [1 ,2 ]
Yakunin, M. V. [1 ,2 ]
Zvonkov, B. N. [3 ]
机构：
[1] Russian Acad Sci, Ural Branch, Inst Met Phys, Ekaterinburg 620990, Russia
[2] Ural Fed Univ, Ekaterinburg 620002, Russia
[3] Nizhnii Novgorod State Univ, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
SCATTERING TIME; QUASI-PARTICLE; ELECTRON; LIFETIME; TEMPERATURE; RELAXATION; RESONANCE;
D O I：
10.1134/S1063782613110055
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effects of tunneling between two parallel two-dimensional electron gases in n-InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a change in the in-plane component of a tilted magnetic field (up to B (aEuro-) = 9.0 T) in the temperature range T = 1.8-70.0 K are investigated. A nonmonotonic temperature dependence of the inverse quantum lifetime tau (q) (-) (T) is obtained from analysis of the dependence of the longitudinal resistance on the parallel component of the tilted magnetic field at fixed temperatures, rho (xx) (B (aEuro-), T). The quadratic portion of this dependence is found to be due to the contribution of inelastic electron-electron scattering. The decrease in the inverse quantum lifetime tau (q) (-) (T) at T > 0.1T (F) cannot be described within known theories; it seems, it is not related to the processes of electron momentum relaxation.
引用
收藏
页码：1447 / 1451
页数：5
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