Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy

被引：10

作者：

Meissner, Christian ^{[1
,2
]}

Ploch, Simon ^{[1
]}

Leyer, Martin ^{[1
]}

Pristovsek, Markus ^{[1
]}

Kneissl, Michael ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] ISAS Inst Analyt Sci, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Nanostructures; Metalorganic vapour phase epitaxy; Nitrides; Semiconducting indium compounds;

D O I：

10.1016/j.jcrysgro.2008.07.066

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated growth of InN quantum dots (QDs) on GaN (0 0 0 1) in metalorganic vapour phase epitaxy as a function of growth temperature, trimethylindium partial pressure, and growth time. The growth was analysed in situ by spectroscopic ellipsometry and ex situ by X-ray diffraction and atomic force microscopy. The QDs were found for all growth temperatures between 480 degrees C and 600 degrees C and for all growth times. The density increased exponentially with decreasing growth temperature, up to 10(11) cm(-2) for 500 degrees C. By changing the amount of deposited material it was possible to control the size of the QDs. Above 530 degrees C a reduction of the effective growth rate was also observed. Reducing the V/III ratio by trimethylindium partial pressure from 15,000 to 5000 led to an increase in the growth rate. Both effects are due to reduced etching of the InN QDs by ammonia. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4959 / 4962

页数：4

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