Minipressure sensor using AlGaN/GaN high electron mobility transistors

被引：18

作者：

Hung, S. C. ^{[1
]}

Chou, B. H. ^{[2
]}

Chang, C. Y. ^{[1
]}

Lo, C. F. ^{[2
]}

Chen, K. H. ^{[2
]}

Wang, Y. L. ^{[1
]}

Pearton, S. J. ^{[1
]}

Dabiran, Amir ^{[3
]}

Chow, P. P. ^{[3
]}

Chi, G. C. ^{[4
]}

Ren, F. ^{[2
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

[4] Natl Cent Univ, Dept Phys, Jhongli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; pressure sensors; wide band gap semiconductors; HEMTS;

D O I：

10.1063/1.3072606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) with a polarized polyvinylidene difluoride (PVDF) film coated on the gate area exhibited significant changes in channel conductance upon exposure to different ambient pressures. The PVDF thin film was deposited on the gate region with an ink-jet plotter. Next, the PDVF film was polarized with an electrode located 2 mm above the PVDF film at a bias voltage of 10 kV and 70 degrees C. Variations in ambient pressure induced changes in the charge in the polarized PVDF, leading to a change in surface charges on the gate region of the HEMT. Changes in the gate charge were amplified through the modulation of the drain current in the HEMT. By reversing the polarity of the polarized PVDF film, the drain current dependence on the pressure could be reversed. Our results indicate that HEMTs have potential for use as pressure sensors.

引用

页数：3

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