Dielectric Properties of Al-Nb Amorphous Mixed Oxides

被引：19
作者：
Di Franco, F. [1 ]
Santamaria, M. [1 ]
Di Quarto, F. [1 ]
La Mantia, F. [2 ]
de Sa, A. I. [3 ]
Rangel, C. M. [3 ]
机构：
[1] Univ Palermo, DICAM, Electrochem Mat Sci Lab, I-90128 Palermo, Italy
[2] Ruhr Univ Bochum, Zentrum Elektrochem, D-44801 Bochum, Germany
[3] LNEG, Fuel Cells & Hydrogen Unit, P-1649038 Lisbon, Portugal
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 11期
关键词：
SOLID-STATE PROPERTIES; PHYSICOCHEMICAL CHARACTERIZATION; PASSIVE FILMS; IMPEDANCE; ALUMINUM; SPECTROSCOPY; ADMITTANCE; ELECTRODES; BEHAVIOR; NIOBIUM;
D O I：
10.1149/2.012311jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An impedance study of amorphous thin oxide films grown on sputtered Al-Nb alloys is presented. The characterization of the electronic properties of mixed amorphous oxide on the basis of the theory of amorphous semiconductor Schottky barrier has been carried out for anodic film on Al-92at.%Nb in a very detailed manner. The semiconductor to insulator transition of formed oxides as a function of the alloy composition at fixed final voltage has been supported by differential admittance study. A possible rationale for this transition has been suggested taking into account the changes of solid state properties, optical bandgap and electronic structure of the films, derived from the fitting of the differential admittance curves at different frequencies. (C) 2013 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N205 / N210
页数：6
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