Preparation and properties of micro-hotplates for gas sensors based on GaAs

被引：1
|
作者：
Tengeri, D. [1 ]
Pullmannova, A. [1 ]
Hotovy, I. [1 ]
Rehacek, V. [1 ]
Hascik, S. [2 ]
Lalinsky, T. [2 ]
机构：
[1] Slovak Tech Univ, Dept Microelect, Ilkovicova 3, Bratislava 81219, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia
来源：
ASDAM 2008, CONFERENCE PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/ASDAM.2008.4743349
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work analysis of three different heating systems for two types of Pt micro-hotplate is reported: GaAs bulk structure (bulk GaAs), polymide/GaAs bulk structure (PI-GaAs) and AlGaAs/GaAs suspended membrane structure (AlGaAs/GaAs). Complex electro - thermal characterization of prepared micro-hotplates was realized. Maximal reachable temperature of suspended membrane heating structure was 260 degrees C with corresponding power 36 m W compared with the GaAs bulk structure with maximal temperature 220 degrees C and corresponding power 1.5 W. At temperatures and powers above maximal limits, degradation and destruction of heating meanders occurred Power consumption P-200 degrees C of sample on GaAs bulk substrate was 850 mW, and on PI/GaAs bulk substrate 380mW, whereas power consumption of sample prepared on AlGaAs/GaAs suspended membrane was significantly lower about 26 mW.
引用
收藏
页码：323 / +
页数：2
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