InP Nanowires Grown by SA-MOVPE

被引：0
|
作者：
Gao, Q. [1 ]
Tan, H. H. [1 ]
Fu, L. [1 ]
Parkinson, P. [1 ]
Breuer, S. [1 ]
Wong-Leung, J. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
来源：
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
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页码：45 / 46
页数：2
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