Measurements of Raman crystallinity profiles in thin-film microcrystalline silicon solar cells

被引：12

作者：

Choong, G. ^{[1
]}

Vallat-Sauvain, E. ^{[1
]}

Multone, X. ^{[1
]}

Fesquet, L. ^{[1
]}

Kroll, U. ^{[1
]}

Meier, J. ^{[1
]}

机构：

[1] TEL Solar Lab SA, CH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 23期

关键词：

LAYERS;

D O I：

10.1088/0022-3727/46/23/235105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wedge-polished thin film microcrystalline silicon solar cells are prepared and used for micro-Raman measurements. Thereby, the variations of the Raman crystallinity with depth are accessed easily. Depth resolution limits of the measurement set-up are established and calculations evidencing the role of optical limits are presented. Due to this new technique, Raman crystallinity profiles of two microcrystalline silicon cells give first hints for the optimization of the profile leading to improved electrical performance of such devices.

引用

页数：5

共 10 条

[1]

Agbo S. N., 2011, Proceedings of the 26th European International Conference on Photovoltaic Solar Energy, P2653

[2] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY [J].