Free electron behavior in InN: On the role of dislocations and surface electron accumulation

被引：39

作者：

Darakchieva, V. ^{[1
,2
]}

Hofmann, T. ^{[3
,4
]}

Schubert, M. ^{[3
,4
]}

Sernelius, B. E. ^{[2
]}

Monemar, B. ^{[2
]}

Persson, P. O. A. ^{[2
]}

Giuliani, F. ^{[2
]}

Alves, E. ^{[1
]}

Lu, H. ^{[5
]}

Schaff, W. J. ^{[5
]}

机构：

[1] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

[2] Linkoping Univ, IFM, SE-58183 Linkoping, Sweden

[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[4] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[5] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 02期

基金：

瑞典研究理事会;

关键词：

dislocations; doping; electron density; Hall effect; III-V semiconductors; indium compounds; semiconductor thin films; transmission electron microscopy; vacancies (crystal); wide band gap semiconductors; ELLIPSOMETRY; LAYER;

D O I：

10.1063/1.3065030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The free electron behavior in InN is studied on the basis of decoupled bulk and surface accumulation electron densities in InN films measured by contactless optical Hall effect. It is shown that the variation in the bulk electron density with film thickness does not follow the models of free electrons generated by dislocation-associated nitrogen vacancies. This finding, further supported by transmission electron microscopy results, indicates the existence of a different thickness-dependent doping mechanism. Furthermore, we observe a noticeable dependence of the surface electron density on the bulk density, which can be exploited for tuning the surface charge in future InN based devices.

引用

页数：3

共 23 条

[1] Model for the thickness dependence of electron concentration in InN films
Cimalla, V.
Lebedev, V.
Morales, F. M.
Goldhahn, R.
Ambacher, O.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (17)
[2] Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
Dimakis, E
Iliopoulos, E
Tsagaraki, K
Kehagias, T
Komninou, P
Georgakilas, A
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
[3] In-polar InN grown by plasma-assisted molecular beam epitaxy
Gallinat, Chad S.
Koblmuller, Gregor
Brown, Jay S.
Bernardis, Sarah
Speck, James S.
Chern, Grace D.
Readinger, Eric D.
Shen, Hongen
Wraback, Michael
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (03)
[4] Optical hall effect in hexagonal InN
Hofmann, T.
Darakchieva, V.
Monemar, B.
Lu, H.
Schaff, W. J.
Schubert, M.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (05) : 611 - 615
[5] Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry -: art. no. 042105
Hofmann, T
Schade, U
Agarwal, KC
Daniel, B
Klingshirn, C
Hetterich, M
Herzinger, CM
Schubert, M
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3
[6] Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P
Hofmann, T
Schubert, M
Herzinger, CM
Pietzonka, I
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3463 - 3465
[7] Electron effective mass and phonon modes in GaAs incorporating boron and indium
Hofmann, T.
Schubert, M.
Leibiger, G.
Gottschalch, V.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (18)
[8] Sources of unintentional conductivity in InN
Janotti, Anderson
Van de Walle, Chris G.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (03)
[9] Determination of the branch-point energy of InN:: Chemical trends in common-cation and common-anion semiconductors
King, P. D. C.
Veal, T. D.
Jefferson, P. H.
Hatfield, S. A.
Piper, L. F. J.
McConville, C. F.
Fuchs, F.
Furthmueller, J.
Bechstedt, F.
Lu, Hai
Schaff, W. J.
[J]. PHYSICAL REVIEW B, 2008, 77 (04)
[10] Effect of surface oxidation on electron transport in InN thin films
Lebedev, V.
Wang, Ch. Y.
Cimalla, V.
Hauguth, S.
Kups, T.
Ali, M.
Ecke, G.
Himmerlich, M.
Krischok, S.
Schaefer, J. A.
Ambacher, O.
Polyakov, V. M.
Schwierz, F.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)

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