Microscopic Imaging of Inversion Layer Formation in Insulator/Semiconductor Structure by Scanning Capacitance Transient Microscopy

被引：0

作者：

Mori, Hidenobu ^{[1
]}

Yoshida, Haruhiko ^{[1
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan

来源：

2018 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2018年

关键词：

generation lifetime; scanning capacitance microscopy; capacitance transient; CHARGE; TRAPS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microscopic characterization of generation lifetimes in a SiO2/Si structure has been carried out using scanning capacitance microscopy (SCM). Generation lifetimes could be investigated by monitoring the capacitance transient due to inversion layer formation. The validity of local capacitance transient measurements by SCM was verified by comparing with the results of conventional capacitance transient measurements using a MOS capacitor. Furthermore, it was demonstrated that SCM can be used for imaging of the formation process of the inversion layer on a nanometer scale.

引用

页数：2

共 11 条

[1] Local charge trapping and detection of trapped charge by scanning capacitance microscope in the SiO2/Si system [J].

Hong, JW ;

Shin, SM ;

Kang, CJ ;

Kuk, Y ;

Khim, ZG ;

Park, SI .

APPLIED PHYSICS LETTERS, 1999, 75 (12) :1760-1762

[2] Variable-temperature scanning capacitance microscopy: A way to probe charge traps in oxide or semiconductor [J].

Kim, CK ;

Yoon, IT ;

Kuk, Y ;

Lim, H .

APPLIED PHYSICS LETTERS, 2001, 78 (05) :613-615

[3] Local mapping of interface traps in HfSiO/Si structure by scanning capacitance microscopy using dV/dC signal [J].

Kuge, Shingo ;

Yoshida, Haruhiko .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] Investigation of local charged defects within high-temperature annealed HfSiON/SiO2 gate stacks by scanning capacitance spectroscopy [J].

Naitou, Y. ;

Ando, A. ;

Ogiso, H. ;

Kamiyama, S. ;

Nara, Y. ;

Yasutake, K. ;

Watanabe, H. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)

[6] Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation [J].

O'Malley, ML ;

Timp, GL ;

Moccio, SV ;

Garno, JP ;

Kleiman, RN .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :272-274

[7]

Schroder D. K., 1998, SEMICONDUCTOR MAT DE, P477

[8] LATERAL DOPANT PROFILING WITH 200 NM RESOLUTION BY SCANNING CAPACITANCE MICROSCOPY [J].

WILLIAMS, CC ;

SLINKMAN, J ;

HOUGH, WP ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1989, 55 (16) :1662-1664

[9] SCANNING CAPACITANCE MICROSCOPY ON A 25 NM SCALE [J].

WILLIAMS, CC ;

HOUGH, WP ;

RISHTON, SA .

APPLIED PHYSICS LETTERS, 1989, 55 (02) :203-205

[10] Theoretical model of interface trap density using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements [J].

Wong, KM ;

Chim, WK .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

← 1 2 →