Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and PIN diode models

被引：123
作者：
Bryant, AT [1 ]
Kang, XS
Santi, E
Palmer, PR
Hudgins, JL
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2006年 / 21卷 / 02期
关键词：
insulated gate bipolar transistor (IGBT) model; optimized parameter extraction; parameter extraction; power diode model; semiconductor modeling;
D O I：
10.1109/TPEL.2005.869742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the :12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method.
引用
收藏
页码：295 / 309
页数：15
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