Thermally Induced Defects on WSe2

被引:35
作者
Blades, William H. [1 ]
Frady, Nicholas J. [2 ]
Litwin, Peter M. [1 ]
McDonnell, Stephen J. [1 ]
Reinke, Petra [1 ]
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[2] Univ Virginia, Dept Chem, Charlottesville, VA 22904 USA
关键词
SCANNING-TUNNELING-MICROSCOPY; SPECTROSCOPY; MONOLAYERS; EPITAXY; GROWTH; MOS2; WS2;
D O I
10.1021/acs.jpcc.0c04440
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The 2D nature of transition metal dichalcogenides (TMDs) makes their electronic and optical performance highly susceptible to the presence of defects. At elevated temperatures, which can be reached during growth or in operation, additional defects can be introduced and lead to further material degradation. Therefore, by studying the impact of temperature on 2D-T MDs the formation of defects and their respective degradation pathways can be established. The electronic and geometric structure and density of thermally induced defects on 2D tungsten diselenide (WSe2) layers were examined using scanning tunneling microscopy/spectroscopy (STM/STS). WSe2 layers were grown on highly ordered pyrolytic graphite (HOPG), via molecular beam epitaxy (MBE) and annealed at 600 degrees C, which caused a 7-fold increase in overall defect density. A layer-dependent trend emerged whereby the defect density on the first layer was greater than the second, suggesting that the TMD-graphite and TMD-TMD van der Waals interactions influence the formation energy of thermally growth defects. The defect inventory included single-point vacancies and a collection of larger defects with complex geometric and electronic signatures. These defects were classified by matching their unique electronic structures with their respective topographical presentation via spatially resolved STS maps. Defect states at the conduction and valence band edges introduced n- or p-type character and generally lowered the local band gap around each defect site. A unique defect structure displayed an increased band gap, likely as a consequence of local delamination of the TMD due to subsurface Se-cluster formation. Density functional theory (DFT) was used to examine select defects and supported the interpretation of the STM/STS work with density of states (DOS) and local-integrated DOS calculations. The assessment of the geometric and electronic signatures and details of the local doping profile around all defect sites deepened our understanding of the thermal stability of WSe2.
引用
收藏
页码:15337 / 15346
页数:10
相关论文
共 45 条
[1]   One dimensional metallic edges in atomically thin WSe2 induced by air exposure [J].
Addou, Rafik ;
Smyth, Christopher M. ;
Noh, Ji-Young ;
Lin, Yu-Chuan ;
Pan, Yi ;
Eichfeld, Sarah M. ;
Foelsch, Stefan ;
Robinson, Joshua A. ;
Cho, Kyeongjae ;
Feenstra, Randall M. ;
Wallace, Robert M. .
2D MATERIALS, 2018, 5 (02)
[2]   Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability [J].
Addou, Rafik ;
Wallace, Robert M. .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (39) :26400-26406
[3]   Two-dimensional flexible nanoelectronics [J].
Akinwande, Deji ;
Petrone, Nicholas ;
Hone, James .
NATURE COMMUNICATIONS, 2014, 5
[4]   Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides [J].
Barja, Sara ;
Refaely-Abramson, Sivan ;
Schuler, Bruno ;
Qiu, Diana Y. ;
Pulkin, Artem ;
Wickenburg, Sebastian ;
Ryu, Hyejin ;
Ugeda, Miguel M. ;
Kastl, Christoph ;
Chen, Christopher ;
Hwang, Choongyu ;
Schwartzberg, Adam ;
Aloni, Shaul ;
Mo, Sung-Kwan ;
Ogletree, D. Frank ;
Crommie, Michael F. ;
Yazyev, Oleg, V ;
Louie, Steven G. ;
Neaton, Jeffrey B. ;
Weber-Bargioni, Alexander .
NATURE COMMUNICATIONS, 2019, 10 (1)
[5]  
Chhowalla M, 2016, NAT REV MATER, V1, DOI [10.1038/natrevmats.2016.52, 10.1038/natrevmats2016.52]
[6]   WSe2 field effect transistors with enhanced ambipolar characteristics [J].
Das, Saptarshi ;
Appenzeller, Joerg .
APPLIED PHYSICS LETTERS, 2013, 103 (10)
[7]   Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control [J].
Edelberg, Drew ;
Rhodes, Daniel ;
Kerelsky, Alexander ;
Kim, Bumho ;
Wang, Jue ;
Zangiabadi, Amirali ;
Kim, Chanul ;
Abhinandan, Antony ;
Ardelean, Jenny ;
Scully, Micheal ;
Scullion, Declan ;
Embon, Lior ;
Zu, Rui ;
Santos, Elton J. G. ;
Balicas, Luis ;
Marianetti, Chris ;
Barmak, Katayun ;
Zhu, Xiaoyang ;
Hone, James ;
Pasupathy, Abhay N. .
NANO LETTERS, 2019, 19 (07) :4371-4379
[8]  
Fang H, 2012, NANO LETT, V12, P3788, DOI [10.1021/nl301702r, 10.1021/nl3040674]
[9]   TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS [J].
FEENSTRA, RM .
PHYSICAL REVIEW B, 1994, 50 (07) :4561-4570
[10]   TUNNELING SPECTROSCOPY OF THE SI(111)2X1 SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
FEIN, AP .
SURFACE SCIENCE, 1987, 181 (1-2) :295-306