Composition dependent bilayer atomic ordering in AlxGa1-xN films examined by polarization-dependent extended x-ray absorption fine structure

被引：19

作者：

Woicik, J. C. ^{[1
]}

Ludwig, K. F., Jr. ^{[2
]}

Moustakas, T. D. ^{[2
,3
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Boston Univ, Dept Phys, Boston, MA 01770 USA

[3] Boston Univ, Dept Elect Engn, Boston, MA 01770 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 16期

关键词：

aluminium compounds; EXAFS; gallium compounds; III-V semiconductors; semiconductor thin films; wide band gap semiconductors; COMPOSITION FLUCTUATIONS; ALLOYS; SAPPHIRE; GAN; SI;

D O I：

10.1063/1.4704678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extended x-ray absorption fine structure has been used to study the local structure of ordered AlxGa1-xN films with nominal concentrations of x = 0.20 and x = 0.45. Strong cation ordering is found in alternating (0001) planes for both samples, with the 20% sample exhibiting nearly ideal local order compared to the 45% sample. Significant distortions in the nearest-neighbor Ga-N distances compared to the virtual crystal approximation are observed, although these distortions are found to be smaller than for disordered films. This result is counter to current theoretical predictions.

引用

页数：4

共 35 条

[21] Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy [J].