Composition dependent bilayer atomic ordering in AlxGa1-xN films examined by polarization-dependent extended x-ray absorption fine structure

被引：19

作者：

Woicik, J. C. ^{[1
]}

Ludwig, K. F., Jr. ^{[2
]}

Moustakas, T. D. ^{[2
,3
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Boston Univ, Dept Phys, Boston, MA 01770 USA

[3] Boston Univ, Dept Elect Engn, Boston, MA 01770 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 16期

关键词：

aluminium compounds; EXAFS; gallium compounds; III-V semiconductors; semiconductor thin films; wide band gap semiconductors; COMPOSITION FLUCTUATIONS; ALLOYS; SAPPHIRE; GAN; SI;

D O I：

10.1063/1.4704678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extended x-ray absorption fine structure has been used to study the local structure of ordered AlxGa1-xN films with nominal concentrations of x = 0.20 and x = 0.45. Strong cation ordering is found in alternating (0001) planes for both samples, with the 20% sample exhibiting nearly ideal local order compared to the 45% sample. Significant distortions in the nearest-neighbor Ga-N distances compared to the virtual crystal approximation are observed, although these distortions are found to be smaller than for disordered films. This result is counter to current theoretical predictions.

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页数：4

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