Assessing the performance of two-dimensional dopant profiling techniques

被引:55
作者
Duhayon, N
Eyber, P
Fouchier, M
Clarysee, T
Vandervorst, W
Alvarez, D
Schoemann, S
Ciappa, M
Stangoni, M
Fichtner, W
Formanek, P
Kittler, M
Raineri, V
Giannazzo, F
Goghero, D
Rosenwaks, Y
Shikler, R
Saraf, S
Sadewasser, S
Barreau, N
Glatzel, T
Verheijen, M
Mentink, SAM
von Sprekelsen, M
Maltezopoulos, T
Wiesendanger, R
Hellemans, L
机构
[1] IMEC, B-3001 Heverlee, Belgium
[2] Katholieke Univ Leuven, B-3001 Heverlee, Belgium
[3] Katholieke Univ Leuven, INSYS, B-3001 Heverlee, Belgium
[4] Infineon Technol AG, D-81730 Munich, Germany
[5] ETH, Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[6] IHP, D-15236 Frankfurt, Germany
[7] CNR, IMM, Sez Catania, I-95121 Catania, Italy
[8] Tel Aviv Univ, Fac Engn, IL-69978 Tel Aviv, Israel
[9] Hahn Meitner Inst Berlin GmbH, Abt SE2, D-14109 Berlin, Germany
[10] Philips CFT, NL-5656 AA Eindhoven, Netherlands
[11] Univ Hamburg, MARCH, CNN, D-20355 Hamburg, Germany
[12] Katholieke Univ Leuven, B-3001 Heverlee, Belgium
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词
D O I
10.1116/1.1638775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional (2D) dopant profiling techniques (SCM, SSRM, KPFM, SEM, and electron holography). This study was done within the framework of a European project (HERCULAS), which is focused on the improvement of 2D-profiling tools. Different structures (staircase calibration samples, bipolar transistor, junctions) were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted. (C) 2004 American Vacuum Society.
引用
收藏
页码:385 / 393
页数:9
相关论文
共 18 条
  • [11] Quantitative analysis of one-dimensional dopant profile by electron holography
    McCartney, MR
    Gribelyuk, MA
    Li, J
    Ronsheim, P
    McMurray, JS
    Smith, DJ
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (17) : 3213 - 3215
  • [12] Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors
    Schönjahn, C
    Humphreys, CJ
    Glick, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) : 7667 - 7671
  • [13] Potential imaging of operating light-emitting devices using Kelvin force microscopy
    Shikler, R
    Meoded, T
    Fried, N
    Rosenwaks, Y
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2972 - 2974
  • [14] High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy
    Sommerhalter, C
    Matthes, TW
    Glatzel, T
    Jäger-Waldau, A
    Lux-Steiner, MC
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (02) : 286 - 288
  • [15] Sze S. M., 1969, PHYS SEMICONDUCTOR D
  • [16] Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
    Venables, D
    Jain, H
    Collins, DC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 362 - 366
  • [17] Volkl E., 1999, Introduction to Electron Holography, DOI 10.1007/978-1-4615-4817-1
  • [18] Scanning capacitance microscope methodology for quantitative analysis of p-n junctions
    Zavyalov, VV
    McMurray, JS
    Williams, CC
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7774 - 7783