Multi-bit dark state memory: Double quantum dot as an electronic quantum memory

被引:5
作者
Aharon, Eran [1 ]
Pozner, Roni [1 ]
Lifshitz, Efrat [1 ]
Peskin, Uri [1 ]
机构
[1] Technion Israel Inst Technol, IL-32000 Haifa, Israel
关键词
COULOMB-BLOCKADE; TRANSPORT; FIELD;
D O I
10.1063/1.4972340
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum dot clusters enable the creation of dark states which preserve electrons or holes in a coherent superposition of dot states for a long time. Various quantum logic devices can be envisioned to arise from the possibility of storing such trapped particles for future release on demand. In this work, we consider a double quantum dot memory device, which enables the preservation of a coherent state to be released as multiple classical bits. Our unique device architecture uses an external gating for storing (writing) the coherent state and for retrieving (reading) the classical bits, in addition to exploiting an internal gating effect for the preservation of the coherent state. Published by AIP Publishing.
引用
收藏
页数:7
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