The crystal/glass interface in doped Si3N4

被引：26

作者：

Winkelman, Graham B. ^{[1
]}

Dwyer, Christian ^{[1
]}

Marsh, Chris ^{[1
]}

Hudson, Toby S. ^{[1
]}

Nguyen-Manh, Duc ^{[1
]}

Doblinger, Markus ^{[1
]}

Cockayne, David J. H. ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2006年 / 422卷 / 1-2期

关键词：

transmission electron microscopy; silicon nitride; interfaces;

D O I：

10.1016/j.msea.2006.01.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal inter-faces at the atomic scale. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：77 / 84

页数：8

共 18 条

[1] MICROSTRUCTURAL DESIGN OF TOUGHENED CERAMICS [J].