Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry

被引:221
作者
Song, Yang [1 ]
Dery, Hanan [1 ,2 ]
机构
[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
VALLEY POLARIZATION; MOS2; MOBILITY;
D O I
10.1103/PhysRevLett.111.026601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a theory that elucidates the major momentum and spin relaxation processes for electrons, holes, and hot excitons in monolayer transition-metal dichalcogenides. We expand on spin flips induced by flexural phonons and show that the spin relaxation is ultrafast for electrons in free-standing membranes while being mitigated in supported membranes. This behavior due to interaction with flexural phonons is universal in two-dimensional membranes that respect mirror symmetry, and it leads to a counterintuitive inverse relation between mobility and spin relaxation.
引用
收藏
页数:5
相关论文
共 33 条
[11]   Phonon-limited mobility in n-type single-layer MoS2 from first principles [J].
Kaasbjerg, Kristen ;
Thygesen, Kristian S. ;
Jacobsen, Karsten W. .
PHYSICAL REVIEW B, 2012, 85 (11)
[12]   High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals [J].
Kim, Sunkook ;
Konar, Aniruddha ;
Hwang, Wan-Sik ;
Lee, Jong Hak ;
Lee, Jiyoul ;
Yang, Jaehyun ;
Jung, Changhoon ;
Kim, Hyoungsub ;
Yoo, Ji-Beom ;
Choi, Jae-Young ;
Jin, Yong Wan ;
Lee, Sang Yoon ;
Jena, Debdeep ;
Choi, Woong ;
Kim, Kinam .
NATURE COMMUNICATIONS, 2012, 3
[13]   Valley polarization and intervalley scattering in monolayer MoS2 [J].
Kioseoglou, G. ;
Hanbicki, A. T. ;
Currie, M. ;
Friedman, A. L. ;
Gunlycke, D. ;
Jonker, B. T. .
APPLIED PHYSICS LETTERS, 2012, 101 (22)
[14]   Low-temperature photocarrier dynamics in monolayer MoS2 [J].
Korn, T. ;
Heydrich, S. ;
Hirmer, M. ;
Schmutzler, J. ;
Schueller, C. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[15]   THEORY OF GUNN EFFECT [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1736-&
[16]   Field-Induced Negative Differential Spin Lifetime in Silicon [J].
Li, Jing ;
Qing, Lan ;
Dery, Hanan ;
Appelbaum, Ian .
PHYSICAL REVIEW LETTERS, 2012, 108 (15)
[17]   Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions [J].
Lu, Hai-Zhou ;
Yao, Wang ;
Xiao, Di ;
Shen, Shun-Qing .
PHYSICAL REVIEW LETTERS, 2013, 110 (01)
[18]   Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].
Mak, Kin Fai ;
Lee, Changgu ;
Hone, James ;
Shan, Jie ;
Heinz, Tony F. .
PHYSICAL REVIEW LETTERS, 2010, 105 (13)
[19]  
Mak KF, 2012, NAT NANOTECHNOL, V7, P494, DOI [10.1038/nnano.2012.96, 10.1038/NNANO.2012.96]
[20]   Flexural phonons in free-standing graphene [J].
Mariani, Eros ;
von Oppen, Felix .
PHYSICAL REVIEW LETTERS, 2008, 100 (07)