Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors

被引：45

作者：

Hong, Woong-Ki ^{[1
]}

Jo, Gunho ^{[1
]}

Kwon, Soon-Shin ^{[1
]}

Song, Sunghoon ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat & Sci Engn, Kwangju 500712, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

关键词：

Field-effect transistor (FET); passivation; surface roughness; ZnO nanowire;

D O I：

10.1109/TED.2008.2005156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A review on the tunable electrical properties of ZnO nanowire field-effect transistors (FETs) is presented. The FETs made from surface-tailored ZnO nanowire exhibit two different types of operation modes, which are distinguished as depletion and enhancement modes in terms of the polarity of the threshold voltage. We demonstrate that the transport properties of ZnO nanowire FETs are associated with the influence of nanowire size and surface roughness associated with the presence of surface trap states at the interfaces as well as the surface chemistry in environments.

引用

页码：3020 / 3029

页数：10

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