EKV-based nonlinear analytical model for the MRC circuit

被引：2

作者：

Vidal, E

Martínez, H

Porta, S

Poveda, A

机构：

[1] Univ Politecn Cataluna, ETSETB, Dept Ingn Elect, ES-08034 Barcelona, Spain

[2] Univ Publ Navarra, Dept Ingn Elect & Elect, Pamplona 31006, Spain

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2002年 / 31卷 / 01期

关键词：

CMOS analogue integrated circuits; integrated circuits design;

D O I：

10.1023/A:1014480906985

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Strong differences are detected between the ideal and the actual behaviour of the resistance implemented by an MRC cell. An attempt to deal with these deviations reveals the inadequacy of the widely used BSIM MOSFET model, due to its lack of symmetry when modelling the carrier mobility dependence on the gate voltage. Using instead the EKV model, a nonlinear analytical description for the MRC is presented, rendering a much better estimation of the MRC resistance.

引用

页码：69 / 72

页数：4