InGaPPHEMTs for wireless power applications

被引：0
|
作者：
Lan, E [1 ]
Pitts, B [1 ]
Mikhov, M [1 ]
Hartin, O [1 ]
机构：
[1] Motorola Inc, Semicond Prod Sector, Digital DNA Labs, Tempe, AZ 85284 USA
来源：
2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper shows that we have successfully fabricated a InGaP PHEMT device with tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation. A 15 mm device delivers 30 dBm output power, 10.2 dB associated gain, and 67% power added efficiency at 1dB compression point while operated at 3.5 V and 1.9 GHz.
引用
收藏
页码：2155 / 2157
页数：3
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