Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs

被引：12

作者：

Wang, Jie ^{[1
]}

Chen, Zhanfei ^{[1
]}

You, Shuzhen ^{[2
]}

Zhou, Wenyong ^{[1
]}

Bakeroot, Benoit ^{[3
]}

Liu, Jun ^{[1
]}

Sun, Lingling ^{[1
]}

Decoutere, Stefaan ^{[2
]}

机构：

[1] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuit & Syst, Hangzhou 310018, Peoples R China

[2] IMEC, B-3001 Leuven, Belgium

[3] Univ Ghent, CMST, IMEC, B-9052 Ghent, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Logic gates; Gallium nitride; HEMTs; MODFETs; Integrated circuit modeling; Biological system modeling; Mathematical model; Equivalent circuit model; gate current; p-GaN gate high-electron mobility transistors; transport model; VOLTAGE; DEVICES; BIAS;

D O I：

10.1109/TED.2020.3011380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic emission is the main mechanism of the gate current in forward bias operation while hopping transport component is the main mechanism of gate current in reverse bias operation. This newly developed gate current model was implemented in Verilog-A. A good agreement between the simulations and experimental data demonstrates the accuracy of the model.

引用

页码：3564 / 3567

页数：4

共 28 条

[1] A NEW EMPIRICAL NONLINEAR MODEL FOR HEMT AND MESFET DEVICES [J].

ANGELOV, I ;

ZIRATH, H ;

RORSMAN, N .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (12) :2258-2266

[2]

[Anonymous], 2017, IEEE PHOTONIC TECH L, DOI DOI 10.1109/LPT.2017.2724143

[3] Analytical Model for the Threshold Voltage of p-(Al) GaN High-Electron-Mobility Transistors [J].

Bakeroot, Benoit ;

Stockman, Arno ;

Posthuma, Niels ;

Stoffels, Steve ;

Decoutere, Stefaan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (01) :79-86

[4]

Bertuccio G., 1997, P 5 EUR GAAS REL 3 5, P277

[5] CHARGE-SHEET MODEL OF MOSFET [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355

[6] GaN-on-Si Power Technology: Devices and Applications [J].

Chen, Kevin J. ;

Haeberlen, Oliver ;

Lidow, Alex ;

Tsai, Chun Lin ;

Ueda, Tetsuzo ;

Uemoto, Yasuhiro ;

Wu, Yifeng .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :779-795

[7] Analytical approximation for the MOSFET surface potential [J].

Chen, TL ;

Gildenblat, G .

SOLID-STATE ELECTRONICS, 2001, 45 (02) :335-339

[8]

Curtice W, 2010, IEEE MTT S INT MICR, P1194, DOI 10.1109/MWSYM.2010.5517123

[9] Charge-Based EPFL HEMT Model [J].

Jazaeri, Farzan ;

Sallese, Jean-Michel .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (03) :1218-1229

[10] Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design [J].

Khandelwal, Sourabh ;

Yadav, Chandan ;

Agnihotri, Shantanu ;

Chauhan, Yogesh Singh ;

Curutchet, Arnaud ;

Zimmer, Thomas ;

De Jaeger, Jean-Claude ;

Defrance, Nicolas ;

Fjeldly, Tor A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3216-3222

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