Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

被引：54

作者：

Kamiya, Katsumasa ^{[1
]}

Yang, Moon Young ^{[1
]}

Nagata, Takahiro ^{[2
]}

Park, Seong-Geon ^{[3
]}

Magyari-Koepe, Blanka ^{[3
]}

Chikyow, Toyohiro ^{[2
]}

Yamada, Keisaku ^{[1
]}

Niwa, Masaaki ^{[1
]}

Nishi, Yoshio ^{[3
]}

Shiraishi, Kenji ^{[1
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 15期

基金：

日本学术振兴会;

关键词：

TRANSITION; DEFECTS;

D O I：

10.1103/PhysRevB.87.155201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report that V-O cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with V-O cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes. DOI: 10.1103/PhysRevB.87.155201

引用

页数：5

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