Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing

被引:0
作者
Lee, Benjamin G. [1 ]
Lin, Yu-Ting [2 ]
Sher, Meng-Ju [3 ]
Mazur, Eric [2 ,3 ]
Branz, Howard M. [1 ]
机构
[1] Natl Renewable Energy Lab, Natl Ctr Photovolta, Golden, CO 80401 USA
[2] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
来源
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年
关键词
light trapping; laser texturing; epitaxial silicon; femtosecond laser; Lambertian; PHOTOVOLTAICS;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Femtosecond laser texturing is used to create nano-to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 mu m thick [1-2]. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit [3].
引用
收藏
页码:1606 / 1608
页数:3
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